1.3-MU-M SPOT-SIZE-CONVERTER INTEGRATED LASER-DIODES FABRICATED BY NARROW-STRIPE SELECTIVE MOVPE

High-performance 1.3-mu m spot-size-converter integrated laser diodes (SSC-LD's) have been developed by using narrow-stripe (<2.0 mu m) sele ctive MOVPE, In order to decrease leak current at high temperature, a p-n-p-n current blocking structure was added using a self-alignment pr ocess, These LD's no longer require a semiconductor etching process. S uperior lasing characteristics, such as a low driving current of 56 mA for output power of 10 mW, and high-slope efficiency at 85 degrees C, were achieved by using a high-quality multiple-quantum well (MQW) act ive layer of narrow-stripe selective MOVPE and a p-n-p-n current block ing structure, A narrow radiation angle of 12 degrees was obtained by optimizing the tapered-waveguide profile, A high-coupling efficiency o f -2.8 dB was achieved between a LD chip and a single-mode fiber (SMF) , This SSC-LD is very appropriate as a light source for access network systems, which require a law-cost LD module, It has excellent couplin g efficiency, using a SMF, and a simple fabrication process, using sel ective MOVPE.