STRUCTURAL DEPENDENCE OF 1.3-MU-M NARROW-BEAM LASERS FABRICATED BY SELECTIVE MOCVD GROWTH

The effect of structural parameters on the lasing characteristics of 1 .3-mu m narrow beam lasers has been investigated, Monolithically integ rated vertically tapered multiquantum-well (MQW) waveguide, fabricated by use of selective metal-organic chemical vapor deposition (MOCVD), is used for the expansion of the optical spot size, It is experimental ly shown that the energy separation between the gain and waveguide reg ions that is formed simultaneously by selective MOCVD is shown to be a n important parameter in order to achieve low-threshold current densit y and good temperature characteristics. The lengths of gain and wavegu ide regions have been investigated in terms of temperature characteris tics of threshold current and far-held angle, A lower threshold curren t density and a higher characteristic temperature were obtained for lo nger gain region, We also have estimated the waveguide loss of the mod e-field converter lasers diodes (MFC-LD's), High performance of 1.3-mu m integrated vertically tapered waveguide lasers were achieved in an optimized device.