Dm. Binkley et al., A MICROPOWER CMOS, DIRECT-CONVERSION, VLF RECEIVER CHIP FOR MAGNETIC-FIELD WIRELESS APPLICATIONS, IEEE journal of solid-state circuits, 33(3), 1998, pp. 344-358
A micropower CMOS, direct-conversion very low frequency (VLF) receiver
is described for receiving low-level magnetic fields from resonant se
nsors. The single-chip, phase locked loop (PLL)-synthesized receiver c
overs a frequency range of 10-82 kHz and provides both analog and 9-b
digital baseband I and Q outputs. Digital I and Q outputs are accumula
ted in a companion digital chip which provides baseband signal process
ing. Emphasis is placed on the receiver micropower RF preamplifier whi
ch uses a lateral bipolar input device because of the significant incr
ease in flicker noise illustrated for PMOS devices in weak inversion.
Lateral bipolar transistors are also utilized in the mixer and IF stag
es for low flicker noise and low dc offsets. Special attention is give
n to isolating the internal local oscillator signals from the low-leve
l RF input (0.3 mu V noise floor in 300 Hz BW), and local oscillator f
eedthrough is indiscernible in the RF preamplifier output noise spectr
um. The 100% duty-cycle receiver, intended for miniature, battery-oper
ated wireless applications, operates approximately four months at 80 m
u A from a 6-V, 220-mA-hr battery.