A MICROPOWER CMOS, DIRECT-CONVERSION, VLF RECEIVER CHIP FOR MAGNETIC-FIELD WIRELESS APPLICATIONS

Citation
Dm. Binkley et al., A MICROPOWER CMOS, DIRECT-CONVERSION, VLF RECEIVER CHIP FOR MAGNETIC-FIELD WIRELESS APPLICATIONS, IEEE journal of solid-state circuits, 33(3), 1998, pp. 344-358
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00189200
Volume
33
Issue
3
Year of publication
1998
Pages
344 - 358
Database
ISI
SICI code
0018-9200(1998)33:3<344:AMCDVR>2.0.ZU;2-A
Abstract
A micropower CMOS, direct-conversion very low frequency (VLF) receiver is described for receiving low-level magnetic fields from resonant se nsors. The single-chip, phase locked loop (PLL)-synthesized receiver c overs a frequency range of 10-82 kHz and provides both analog and 9-b digital baseband I and Q outputs. Digital I and Q outputs are accumula ted in a companion digital chip which provides baseband signal process ing. Emphasis is placed on the receiver micropower RF preamplifier whi ch uses a lateral bipolar input device because of the significant incr ease in flicker noise illustrated for PMOS devices in weak inversion. Lateral bipolar transistors are also utilized in the mixer and IF stag es for low flicker noise and low dc offsets. Special attention is give n to isolating the internal local oscillator signals from the low-leve l RF input (0.3 mu V noise floor in 300 Hz BW), and local oscillator f eedthrough is indiscernible in the RF preamplifier output noise spectr um. The 100% duty-cycle receiver, intended for miniature, battery-oper ated wireless applications, operates approximately four months at 80 m u A from a 6-V, 220-mA-hr battery.