BACKSIDE OPTICAL-EMISSION DIAGNOSTICS FOR EXCESS I-DDQ

Authors
KASH JA TSANG JC RIZZOLO RF PATEL AK SHORE AD
Citation
Ja. Kash et al., BACKSIDE OPTICAL-EMISSION DIAGNOSTICS FOR EXCESS I-DDQ, IEEE journal of solid-state circuits, 33(3), 1998, pp. 508-511
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE journal of solid-state circuits → ACNP
ISSN journal
00189200
Volume
33
Issue
3
Year of publication
1998
Pages
508 - 511
Database
ISI
SICI code
0018-9200(1998)33:3<508:BODFEI>2.0.ZU;2-9
Abstract
Backside optical emission was used to diagnose excess quiescent curren t in a multimillion gate microprocessor. Emission images showed the cu rrent was due to FET's improperly set in a conducting state. The utili ty of backside optical emission for IC diagnostics is discussed, and r equirements for optical detectors and sample preparation are considere d.