A COMPARISON OF THE KINETICS AND THE EVOLUTION OF MICROSTRUCTURE OF THE SOLID-PHASE CRYSTALLIZED A-(SI0.7GE0.3 SI) AND A-(SI/SI0.7GE0.3) BILAYER FILMS - INTERFACE VERSUS SURFACE NUCLEATED FILMS/
Th. Kim et al., A COMPARISON OF THE KINETICS AND THE EVOLUTION OF MICROSTRUCTURE OF THE SOLID-PHASE CRYSTALLIZED A-(SI0.7GE0.3 SI) AND A-(SI/SI0.7GE0.3) BILAYER FILMS - INTERFACE VERSUS SURFACE NUCLEATED FILMS/, JPN J A P 2, 37(2A), 1998, pp. 108-111
We have compared the kinetics and the evolution uf microstructure of t
he solid phase crystallized a-(Si/Si0.7Ge0.3) and a-(Si0.7Ge0.3/Si) bi
layer films deposited on SiO2 by low pressure chemical vapor depositio
n (LPCVD). It was identified that the overall thermal budget of the SP
C, the grain size, and the evolution of microstructure were drasticall
y different in these two samples. In particular, we have observed that
the nucleation of an a-(Si/Si0.7Ge0.3) bilayer film started at the in
terface between the Si0.7Ge0.3 film and the SiO2 substrate while that
of an a-(Si0.7Ge0.3/Si) started from the surface of the Si0.7Ge0.3 lay
er located at the surface. By changing the nucleation sites from inter
face to surface. the grain morphology was changed from elliptical to e
quiaxed and the grain size was enlarged from 0.3 mu m to about 8 mu m.
However this resulted in an overall thermal budget increase.