A COMPARISON OF THE KINETICS AND THE EVOLUTION OF MICROSTRUCTURE OF THE SOLID-PHASE CRYSTALLIZED A-(SI0.7GE0.3 SI) AND A-(SI/SI0.7GE0.3) BILAYER FILMS - INTERFACE VERSUS SURFACE NUCLEATED FILMS/

Authors
Citation
Th. Kim et al., A COMPARISON OF THE KINETICS AND THE EVOLUTION OF MICROSTRUCTURE OF THE SOLID-PHASE CRYSTALLIZED A-(SI0.7GE0.3 SI) AND A-(SI/SI0.7GE0.3) BILAYER FILMS - INTERFACE VERSUS SURFACE NUCLEATED FILMS/, JPN J A P 2, 37(2A), 1998, pp. 108-111
Citations number
11
Categorie Soggetti
Physics, Applied
Volume
37
Issue
2A
Year of publication
1998
Pages
108 - 111
Database
ISI
SICI code
Abstract
We have compared the kinetics and the evolution uf microstructure of t he solid phase crystallized a-(Si/Si0.7Ge0.3) and a-(Si0.7Ge0.3/Si) bi layer films deposited on SiO2 by low pressure chemical vapor depositio n (LPCVD). It was identified that the overall thermal budget of the SP C, the grain size, and the evolution of microstructure were drasticall y different in these two samples. In particular, we have observed that the nucleation of an a-(Si/Si0.7Ge0.3) bilayer film started at the in terface between the Si0.7Ge0.3 film and the SiO2 substrate while that of an a-(Si0.7Ge0.3/Si) started from the surface of the Si0.7Ge0.3 lay er located at the surface. By changing the nucleation sites from inter face to surface. the grain morphology was changed from elliptical to e quiaxed and the grain size was enlarged from 0.3 mu m to about 8 mu m. However this resulted in an overall thermal budget increase.