A PHYSICS-BASED, SPICE (SIMULATION PROGRAM WITH INTEGRATED-CIRCUIT EMPHASIS)-COMPATIBLE NON-QUASI-STATIC MOS (METAL-OXIDE-SEMICONDUCTOR) TRANSIENT MODEL-BASED ON THE COLLOCATION METHOD

The collocation method has been applied to derive a new SPICE (Simulat ion Program with Integrated Circuit Emphasis)-compatible non-quasi-sta tic MOS (metal-oxide-semiconductor) transient model. Contrasting to th e conventional approximation methods, the collocation method is simple for the model derivation and efficient in optimizing the variables of the continuity equation. The derived model is fully physics-based in that all the transient currents are directly expressed by only physica lly meaningful, optimized quantities. The model adequately predicts tr ansient currents in the bias region such as the weak inversion region where conventional models show numerical difficulties.