Thin copper films have been deposited by the room temperature reaction
of gaseous copper (II) hexafluoroacetylacetonate [Cu(hfa)(2)] with hy
drogen atoms produced in a remote discharge tube. The resulting films
are conductive and adherent on a wide variety of substrates. Copper at
oms have been observed and measured in the gas phase and were found by
atomic absorption spectroscopy to have a maximum concentration of app
roximately 10(11) atoms/cc in the mixing/reaction zone. The reaction o
f Cu(hfa)(2) with oxygen atoms was also studied. The reaction again re
sulted in the deposition of a film and in addition a green chemilumine
scent glow was observed which was identified as due to the gaseous dia
tomic CuF molecule. Copper atoms were also observed by absorption spec
troscopy within this chemiluminescent reaction with oxygen atoms. The
copper atom concentration was found to be approximately the same as th
at found with the H-atom reaction. The copper atom concentrations and
the relative emission intensities of CuF were studied as a function of
time and position to gain insight into the deposition process.