REMOTE PLASMA COPPER CVD WITH HYDROGEN AND OXYGEN-ATOMS

Citation
Ps. Locke et al., REMOTE PLASMA COPPER CVD WITH HYDROGEN AND OXYGEN-ATOMS, Chemical engineering communications, 153, 1996, pp. 211-219
Citations number
9
ISSN journal
00986445
Volume
153
Year of publication
1996
Pages
211 - 219
Database
ISI
SICI code
0098-6445(1996)153:<211:RPCCWH>2.0.ZU;2-D
Abstract
Thin copper films have been deposited by the room temperature reaction of gaseous copper (II) hexafluoroacetylacetonate [Cu(hfa)(2)] with hy drogen atoms produced in a remote discharge tube. The resulting films are conductive and adherent on a wide variety of substrates. Copper at oms have been observed and measured in the gas phase and were found by atomic absorption spectroscopy to have a maximum concentration of app roximately 10(11) atoms/cc in the mixing/reaction zone. The reaction o f Cu(hfa)(2) with oxygen atoms was also studied. The reaction again re sulted in the deposition of a film and in addition a green chemilumine scent glow was observed which was identified as due to the gaseous dia tomic CuF molecule. Copper atoms were also observed by absorption spec troscopy within this chemiluminescent reaction with oxygen atoms. The copper atom concentration was found to be approximately the same as th at found with the H-atom reaction. The copper atom concentrations and the relative emission intensities of CuF were studied as a function of time and position to gain insight into the deposition process.