NUCLEATION REACTIONS AND FILM GROWTH OF COPPER ON TIN USING HEXAFLUOROACETYLACETONATE COPPER(I) TRIMETHYLVINYLSILANE

In this work, the nucleation and film growth of copper on TiN chemical ly treated with WF6 and air-exposed TiN by chemical vapor deposition(C VD) from hexafluoroacetylacetonate copper(1) trimethylvinylsilane, (HF A)Cu(TMVS), was studied. Copper grows as islands of poorly connected g rains on air-exposed TiN. In contrast, copper grows as a continuous hi m with well-connected grains on the surface of WF6-treated TiN. The ef fect of TiN surface condition has been examined using Auger electron s pectroscopy(AES), X-ray photoelectron spectroscopy(XPS) and scanning e lectron microscopy(SEM). On the basis of our experimental observation, and information in the literature, nucleation reaction mechanisms are proposed for the chemical vapor deposition of copper on the two diffe rent TiN samples.