GAALAS GAAS METAMORPHIC BRAGG MIRROR FOR LONG-WAVELENGTH VCSELS/

Authors
GOLDSTEIN L FORTIN C STARCK C PLAIS A JACQUET J BOUCART J ROCHER A POUSSOU C
Citation
L. Goldstein et al., GAALAS GAAS METAMORPHIC BRAGG MIRROR FOR LONG-WAVELENGTH VCSELS/, Electronics Letters, 34(3), 1998, pp. 268-270
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
3
Year of publication
1998
Pages
268 - 270
Database
ISI
SICI code
0013-5194(1998)34:3<268:GGMBMF>2.0.ZU;2-D
Abstract
A high reflectivity GaAs/AlGaAs Bragg mirror (> 99.7%) has been grown for the first time on InP. Dislocations present in the metamorphic mat erial do not propagate to the active layer. The metamorphic mirror off ers a promising alternative to wafer fusion for long wavelength surfac e-emitting lasers.