GROWTH AND CHARACTERIZATION OF INAS INGASB/INAS/ALSB INFRARED-LASER STRUCTURES/

Authors
YANG MJ MOORE WJ BENNETT BR SHANABROOK BV
Citation
Mj. Yang et al., GROWTH AND CHARACTERIZATION OF INAS INGASB/INAS/ALSB INFRARED-LASER STRUCTURES/, Electronics Letters, 34(3), 1998, pp. 270-272
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
3
Year of publication
1998
Pages
270 - 272
Database
ISI
SICI code
0013-5194(1998)34:3<270:GACOII>2.0.ZU;2-2
Abstract
The authors have studied the molecular-beam epitaxial growth of type-I I heterostructures for mid-wavelength infrared lasers. Based on their photoluminescence spectra and X-ray diffraction patterns, it is found that the quality of these heterostructures is highly sensitive to the growth temperature and the interfacial bond type.