SB-BASED MONOLITHIC VCSEL OPERATING NEAR 2.2-MU-M AT ROOM-TEMPERATURE

Authors
BARANOV AN ROUILLARD Y BOISSIER G GRECH P GAILLARD S ALIBERT C
Citation
An. Baranov et al., SB-BASED MONOLITHIC VCSEL OPERATING NEAR 2.2-MU-M AT ROOM-TEMPERATURE, Electronics Letters, 34(3), 1998, pp. 281-282
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
3
Year of publication
1998
Pages
281 - 282
Database
ISI
SICI code
0013-5194(1998)34:3<281:SMVON2>2.0.ZU;2-B
Abstract
Monolithic Sb-based vertical cavity surface emitting lasers (VCSELs) o perating near 2.2 mu m at room temperature have been successfully fabr icated and characterised. A pulsed output optical power of 20mW has be en achieved, the threshold current density being 2kA/cm(2) for 200 mu m diameter devices. The entire structure was grown in a single growth run using molecular beam epitaxy.