VERY HIGH-GAIN, HIGH-SENSITIVITY, 40GHZ NARROW-BAND PHOTORECEIVER FORCLOCK RECOVERY

A 40GHz photoreceiver has been implemented by cascading on a single al umina substrate a fast side-illuminated AlGaInAs/InP pin photodiode, a nd three narrow-band amplifier chips, based on a 0.2 mu m gate length GaAs pHEMT technology. The package tvas especially designed to suppres s parasitic cavity-resonances. The photoreceiver current-gain is 57dB, and the average input noise is < 30pA/root Hz over the -3dB bandwidth of 40.4-41.4GHz. This is believed to be the highest photoreceiver gai n ever reported in a single compact metal package at such a high frequ ency.