We report on a zero magnetic field transport study of a two-dimensiona
l, variable-density, hole system in GaAs, As the density is varied we
observe, for the first time in GaAs-based materials, a crossover from
an insulating behavior at low density, to a metalliclike behavior at h
igh density, where the metallic behavior is characterized by a large d
rop in the resistivity as the temperature is lowered. These results ar
e in agreement with recent experiments on Si-based two-dimensional sys
tems. We show that, in the metallic region, the resistivity is dominat
ed by an exponential temperature dependence with a characteristic temp
erature which is proportional to the hole density.