VACANCY EQUILIBRIUM CONCENTRATION ON (111), (100) AND (110) PLANES OFSILICON CRYSTAL-SURFACE IN GIBBS ADSORPTION MODEL

Authors
BAKOVETS VV
Citation
Vv. Bakovets, VACANCY EQUILIBRIUM CONCENTRATION ON (111), (100) AND (110) PLANES OFSILICON CRYSTAL-SURFACE IN GIBBS ADSORPTION MODEL, Physica status solidi. b, Basic research, 205(2), 1998, pp. 507-509
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
205
Issue
2
Year of publication
1998
Pages
507 - 509
Database
ISI
SICI code
0370-1972(1998)205:2<507:VECO((>2.0.ZU;2-3
Abstract
The use of Gibbs' adsorption model and dependence of the surface tensi on of crystal planes on the number of surface atoms has allowed to obt ain the ratio of the surface tension of the monocrystal plane to the c oncentration of vacancies in the volume of the crystal. For typical eq uilibrium concentration of monovacancies in the crystal, grown by the Czochralski method, the relative excess adsorption of vacancies on sur faces (111), (100) and (110) is equal to 7x10(7), 11x10(7) and 8x10(7) cm(-2), respectively.