A SIMPLE THEORETICAL-ANALYSIS OF THE CARRIER CONTRIBUTION TO THE ELASTIC-CONSTANTS OF QUANTIZED II-VI SEMICONDUCTORS

In this paper we study the carrier contribution to the elastic constan ts in II-VI semiconductors under magnetic quantization, cross-field co nfiguration, quantum wells, electric field aided quantum wells. quantu m wells under cross-field configuration, inversion layers, magneto inv ersion layers, inversion layers under cross-field configuration and qu antum well wires, respectively, by deducing the respective carrier ene rgy spectra. It has been found, taking p-CdS as an example, that the c arrier contribution to the second-order and third-order elastic consta nts exhibits various types of oscillations with different physical var iables in quantized II-VI structures having quantum confinements in on e, two and three dimensions, respectively. The theoretical results are in agreement with the suggested experimental method of determining th e said contribution in materials having arbitrary dispersion laws.