ELECTRONIC-STRUCTURE OF CHALCOGEN IMPURITIES IN SILICON

Authors
THIAGARAJAN M IYAKUTTI K PALANIYANDI E
Citation
M. Thiagarajan et al., ELECTRONIC-STRUCTURE OF CHALCOGEN IMPURITIES IN SILICON, Physica status solidi. b, Basic research, 205(2), 1998, pp. 553-558
Citations number
30
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
205
Issue
2
Year of publication
1998
Pages
553 - 558
Database
ISI
SICI code
0370-1972(1998)205:2<553:EOCIIS>2.0.ZU;2-2
Abstract
The electronic structure of chalcogen impurities (S, Se and Te) in sil icon has been investigated using self-consistent field MSX alpha metho d. Besides ionization energies, the relation between charge transfer a nd electronegativity and bonding characteristics of these impurities v iith host Si atoms are analyzed. A comparison with available experimen tal results is made.