LATTICE AND ELECTRONIC-STRUCTURE PROPERTIES OF (ALN)(X)(SIC)(1-X) SEMICONDUCTING ALLOY

Citation
A. Zaoui et al., LATTICE AND ELECTRONIC-STRUCTURE PROPERTIES OF (ALN)(X)(SIC)(1-X) SEMICONDUCTING ALLOY, Physica status solidi. b, Basic research, 205(2), 1998, pp. 587-594
Citations number
50
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
205
Issue
2
Year of publication
1998
Pages
587 - 594
Database
ISI
SICI code
0370-1972(1998)205:2<587:LAEPO(>2.0.ZU;2-8
Abstract
The band-gap bowing in zincblende (AlN)(z)(SiC)(1-x) is studied by mea ns of the empirical pseudopotential method (EPM) coupled with the virt ual crystal approximation (VCA) which takes into account the compositi onal disorder as an effective potential. The results obtained within t he VCA show that the bowing parameter is not so important, whereas the adding of the compositional disorder to the VCA clearly shows that th e bowing is rather important in such material. Calculations of the cha rge densities have shown how the bands behave as the composition chang es and this is highly linked to the ionicity character. The variations of the bulk modulus, the force constants and the elastic constants wi th the alloy concentration are also established. The computational res ults agree well with available theoretical and experimental data.