CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES

Authors
HBIB H BONNAUD O GAUNEAU M HAMEDI L MARCHAND R QUEMERAIS A
Citation
H. Hbib et al., CHARACTERIZATION OF PHOSPHORUS OXINITRIDE (PON) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES, Thin solid films, 310(1-2), 1997, pp. 1-7
Citations number
43
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
310
Issue
1-2
Year of publication
1997
Pages
1 - 7
Database
ISI
SICI code
0040-6090(1997)310:1-2<1:COPO(G>2.0.ZU;2-I
Abstract
A new gate-insulating film consisting of phosphorus oxinitride (PON) w as formed on an (n)InP surface by vapour transport technique. The subs trate temperature was in the range of 280-350 degrees C. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelect ron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The interfacial properties of phosphorus oxinitride/(n)InP metal-insulato r-semiconductor were investigated. The minimum value of the interface states density distribution (D-it), evaluated from high-frequency capa citance-voltage (C-V) measurement was 1.2 X 10(11) eV(-1) cm(-2) at ab out 0.48 eV below the conduction band edge of InP. (C) 1997 Elsevier S cience S.A.