A. Neubecker et al., OZONE-ENHANCED MOLECULAR-BEAM DEPOSITION OF NICKEL-OXIDE (NIO) FOR SENSOR APPLICATIONS, Thin solid films, 310(1-2), 1997, pp. 19-23
For the deposition of nickel oxide (NiO) a molecular beam deposition p
rocess in an ozone atmosphere was developed. Purl gaseous ozone is rec
eived from a cooling system, which stores only O-3 at -78 degrees C fr
om a O-2/O-3 gas mixture stream, created with an ozone generator. The
ozone is released by heating up the system to room temperature. For th
e deposition process nickel is evaporated while a constant ozone parti
al pressure is adjusted in the growth chamber. The reactive species of
ozone reacts on the substrate surface with the impinging metal atoms
to form the compound. This process was carried out in an ultra high va
cuum (UHV) chamber to create pure nickel oxide films at room temperatu
re and to study the fundamental layer properties for sensor applicatio
ns. These films were characterized with respect to their stoichiometri
c and optical properties by Auger Electron spectroscopy and ellipsomet
ry. The gas sensitivity of the films (as deposited and annealed) on va
rious gases (H-2, NH3, NO2, SO2, CO) was investigated by work function
measurements. (C) 1997 Elsevier Science S.A.