THE EFFECT OF THERMAL ANNEALING ON AEROSOL-GEL DEPOSITED SIO2-FILMS -A FTIR DECONVOLUTION STUDY

Citation
N. Primeau et al., THE EFFECT OF THERMAL ANNEALING ON AEROSOL-GEL DEPOSITED SIO2-FILMS -A FTIR DECONVOLUTION STUDY, Thin solid films, 310(1-2), 1997, pp. 47-56
Citations number
14
Journal title
ISSN journal
00406090
Volume
310
Issue
1-2
Year of publication
1997
Pages
47 - 56
Database
ISI
SICI code
0040-6090(1997)310:1-2<47:TEOTAO>2.0.ZU;2-N
Abstract
Aerosol-gel process has been used for the deposition of SiO2 thin film s. Layers were deposited from a solution with pH = 3.5 and water to TE OS molar ratio (rw) 2.2 and then treated at various temperatures rangi ng from room temperature to 700 degrees C. As-prepared thin films have been characterized by FTIR spectroscopy. Spectra were acquired in tra nsmission at 65 degrees angle of incidence or at perpendicular inciden ce. Characteristic absorption bands of the SiO2 sol-gel system have be en studied with respect to the posttreatment temperature. Bands locate d at 1250-1000 cm(-1) and around 960 cm(-1) have been deconvoluted in several peaks. The origin and temperature dependence of these peaks ar e discussed. (C) 1997 Elsevier Science S.A.