PHOTOCONDUCTORS BASED ON ZNXCD1-XS AND CDSE1-YSY THIN-FILMS, FABRICATED WITH MULTILAYER STRUCTURE

Photoconductors based on evaporated ZnxCd1-xS and CdSe1-ySy thin films , with a novel multilayer structure, were fabricated and characterized through spectral response measurements. The device structure is const ituted by several layers of different energy gaps, sequentially deposi ted side by side and interconnected in series or in parallel. The infl uence of the preparation conditions, number of layers and electrode co nfiguration, on the performance of the photoconductors was determined. Photoresistors with a detection range between 400 and 750 nm were dev eloped, using four layers with energy gaps varying between 1.8 eV and 1.8 eV and interconnected in parallel. (C) 1997 Elsevier Science S.A.