INP-INGAAS UNI-TRAVELING-CARRIER PHOTODIODE WITH IMPROVED 3-DB BANDWIDTH OF OVER 150 GHZ

Citation
N. Shimizu et al., INP-INGAAS UNI-TRAVELING-CARRIER PHOTODIODE WITH IMPROVED 3-DB BANDWIDTH OF OVER 150 GHZ, IEEE photonics technology letters, 10(3), 1998, pp. 412-414
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
10
Issue
3
Year of publication
1998
Pages
412 - 414
Database
ISI
SICI code
1041-1135(1998)10:3<412:IUPWI3>2.0.ZU;2-3
Abstract
Uni-traveling-carrier photodiodes (UTC-PD's) with ultrafast response a nd high-saturation output are reported. It is experimentally demonstra ted that the photoresponse of UTC-PD's is improved by incorporating a step-like potential profile in the photoabsorption layer. The fabricat ed device shows a peak electrical 3-dB bandwidth of 152 GHz at a low r everse bias voltage of -1.5 V. The output voltage can be increased to as high as 1.9 V at higher reverse bias voltages with the 3-dB bandwid th staying at over three-quarters of the maximum value. To our knowled ge, the obtained response is the fastest among those reported for 1.55 -mu m wavelength photodiodes.