MONOLITHICALLY INTEGRATED SIGE-SI PIN-HBT FRONT-END PHOTORECEIVERS

Authors
RIEH JS KLOTZKIN D QASAIMEH Q LU LH YANG K KATEHI LPB BHATTACHARYA P CROKE ET
Citation
Js. Rieh et al., MONOLITHICALLY INTEGRATED SIGE-SI PIN-HBT FRONT-END PHOTORECEIVERS, IEEE photonics technology letters, 10(3), 1998, pp. 415-417
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
10
Issue
3
Year of publication
1998
Pages
415 - 417
Database
ISI
SICI code
1041-1135(1998)10:3<415:MISPFP>2.0.ZU;2-O
Abstract
Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported, SiGe-Si technology has been developed leading to SiGe-Si HBT's with f(T) = 23 GHz and f( max) = 34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at lambda = 850 nm and bandwidth of 450 MHz, SiGe-Si HBT transimpedance a mplifiers showed transimpedance gain of 52.2 dB.Omega and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.