PHOTOLUMINESCENCE STUDY OF LATERAL CONFINEMENT ENERGY IN T-SHAPED INXGA1-XAS QUANTUM WIRES

Citation
H. Akiyama et al., PHOTOLUMINESCENCE STUDY OF LATERAL CONFINEMENT ENERGY IN T-SHAPED INXGA1-XAS QUANTUM WIRES, Physical review. B, Condensed matter, 57(7), 1998, pp. 3765-3768
Citations number
28
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
57
Issue
7
Year of publication
1998
Pages
3765 - 3768
Database
ISI
SICI code
0163-1829(1998)57:7<3765:PSOLCE>2.0.ZU;2-B
Abstract
A study of high-quality InxGa1-xAs T-shaped quantum wires (T-QWR's) vi a photoluminescence spectroscopy to characterize the lateral confineme nt effect is reported. The effective lateral confinement energy of exc itons in 3.5-nm-scale In0.17Ga0.83As/Al0.3Ga0.7As T-QWR's is found to be as large as 34 meV. The value has been examined in comparison with the previous results on GaAs/Al0.3Ga0.7As and GaAs/AlAs T-QWR's. [S016 3-1829(98)00304-X].