GROWTH OF CUBIC GAN ON SI(001) BY PLASMA-ASSISTED MBE

Authors
YANG B BRANDT O TRAMPERT A JENICHEN B PLOOG KH
Citation
B. Yang et al., GROWTH OF CUBIC GAN ON SI(001) BY PLASMA-ASSISTED MBE, Applied surface science, 123, 1998, pp. 1-6
Citations number
12
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
1 - 6
Database
ISI
SICI code
0169-4332(1998)123:<1:GOCGOS>2.0.ZU;2-2
Abstract
GaN films grown directly on Si(001) by plasma-assisted molecular beam epitaxy are found to undergo a structural phase transformation from ep itaxial growth of the cubic (beta) phase towards textured growth of th e hexagonal (alpha) phase. The origin of this phase transformation is investigated and identified to be due to the formation of amorphous Si xNy material at the GaN/Si interface during the nucleation stage. A Ga As buffer layer overcomes this problem as evidenced by the phase purit y of the resulting epitaxial beta-GaN films on GaAs/Si(001). (C) 1998 Elsevier Science B.V.