A TEM STUDY OF SUBSTRATE PITTING DURING THE MBE GROWTH OF GAN ON GAASAND GAP SUBSTRATES

Authors
TRICKER DM BROWN PD CHENG TS FOXON CT HUMPHREYS CJ
Citation
Dm. Tricker et al., A TEM STUDY OF SUBSTRATE PITTING DURING THE MBE GROWTH OF GAN ON GAASAND GAP SUBSTRATES, Applied surface science, 123, 1998, pp. 22-27
Citations number
3
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
22 - 27
Database
ISI
SICI code
0169-4332(1998)123:<22:ATSOSP>2.0.ZU;2-K
Abstract
When epitaxial GaN is grown on (001) and ((111) over bar)B oriented Ga As and GaP substrates by MBE, pits are found to develop in the substra te. Complementary cross-sectional and plan view transmission electron microscopical observations confirm the crystallographic nature of thes e voids which are considered to form by sourcing of Ga from the substr ate during the first stages of epitaxy. (C) 1998 Elsevier Science B.V.