GROWTH AND ELECTRONIC-STRUCTURE OF DY SILICIDE ON SI(111)

Authors
VANDRE S KALKA T PREINESBERGER C MANKE I EISELE H DAHNEPRIETSCH M MEIER R WESCHKE E KAINDL G
Citation
S. Vandre et al., GROWTH AND ELECTRONIC-STRUCTURE OF DY SILICIDE ON SI(111), Applied surface science, 123, 1998, pp. 100-103
Citations number
12
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
100 - 103
Database
ISI
SICI code
0169-4332(1998)123:<100:GAEODS>2.0.ZU;2-T
Abstract
We report on a study of core-level photoemission spectroscopy and scan ning tunneling microscopy of dysprosium silicide grown on n-type Si(11 1). The structure of the silicide was found to be different for submon olayers and thicker films. In the monolayer regime, an extremely low S chottky-barrier height was observed, (C) 1998 Elsevier Science B.V.