STRUCTURE DETERMINATION OF THE INDIUM INDUCED SI(001)-(4X3) RECONSTRUCTION BY SURFACE X-RAY-DIFFRACTION AND SCANNING-TUNNELING-MICROSCOPY

Authors
BUNK O FALKENBERG G SEEHOFER L ZEYSING JH JOHNSON RL NIELSEN M FEIDENHANSL R LANDEMARK E
Citation
O. Bunk et al., STRUCTURE DETERMINATION OF THE INDIUM INDUCED SI(001)-(4X3) RECONSTRUCTION BY SURFACE X-RAY-DIFFRACTION AND SCANNING-TUNNELING-MICROSCOPY, Applied surface science, 123, 1998, pp. 104-110
Citations number
10
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
104 - 110
Database
ISI
SICI code
0169-4332(1998)123:<104:SDOTII>2.0.ZU;2-4
Abstract
The indium-induced Si(001)-(4 X 3) reconstruction has been investigate d by surface X-ray diffraction (SXRD) measurements with synchrotron ra diation and scanning tunneling microscopy (STM). The Patterson functio n analysis enables us to exclude In dimers as a structural element in this reconstruction. We present a new structural model which includes 6 In atoms threefold coordinated to Si atoms and 5 displaced Si atoms per unit cell. Relaxations down to the sixth layer were determined. 'T rimers' made up of In-Si-In atoms are a key structural element. (C) 19 98 Elsevier Science B.V.