A study of the removal of the native oxide from InSb(001) substrates u
sing X-ray diffraction and Auger electron spectroscopy is reported. Se
veral methods have been investigated to produce atomically flat, oxide
free, surfaces. These include thermal annealing, argon ion bombardmen
t at both room temperature and elevated temperature, and irradiation o
f the surface with atomic hydrogen. The quality of the resulting c(8 X
2) surface gave a good indication of the relative success of each tec
hnique. The reflected X-ray intensity was measured as a function of pe
rpendicular momentum transfer l along the specular (00l) rod and gives
a clear indication of the roughness of each surface. The lateral orde
r was determined from the width of the in-plane fractional order refle
ctions. The results show a marked improvement in surface order when us
ing hydrogen irradiation/annealing as opposed to thermal annealing alo
ne. A more significant improvement in surface quality, however, was no
ted when sputtering at elevated temperature. (C) 1998 Elsevier Science
B.V.