ANOMALOUS ELECTRON-TUNNELING THROUGH A AG ISLAND ON THE GAAS(110) SURFACE OBSERVED BY THE CURRENT IMAGE TUNNELING SPECTROSCOPY (CITS)

Authors
JIANG CS NAKAYAMA T AONO M
Citation
Cs. Jiang et al., ANOMALOUS ELECTRON-TUNNELING THROUGH A AG ISLAND ON THE GAAS(110) SURFACE OBSERVED BY THE CURRENT IMAGE TUNNELING SPECTROSCOPY (CITS), Applied surface science, 123, 1998, pp. 166-170
Citations number
16
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
166 - 170
Database
ISI
SICI code
0169-4332(1998)123:<166:AETAAI>2.0.ZU;2-M
Abstract
Using scanning tunneling microscopy, Coulomb blockade of tunneling ele ctrons was realized on a simple metal/semiconductor system, by taking a sample of individual Ag clusters formed on the clean GaAs(110) surfa ce, The second barrier of a two tunneling junction is at a space inter val at the Ag/GaAs(110) interface, which is naturally formed due to a lattice match of the cluster and the GaAs(110) substrate. Images of di fferential conductance taken of the clusters by current image tunnelin g spectroscopy (CITS) demonstrate that the electron tunneling is close ly related to detailed atomic structures of the clusters. (C) 1998 Els evier Science B.V.