The results of scanning tunnelling spectroscopy (STS) studies of wet c
hemical sulphur passivated InP(100) surfaces are presented. The aim of
the study was to attempt to establish a more quantitative measure of
the surface passivation using the STM. Current voltage (I-V) spectrosc
opic plots for sulphur passivated and native oxide surfaces displayed
distinct differences previously reported for GaAs(100) surfaces. Curre
nt distance (I-S) spectroscopic results for both passivated and unpass
ivated InP surfaces and the accompanying apparent barrier height (phi(
A)) measurements are presented along with a justification of the resul
ts. For reference purposes, phi(A) measurements of the Au(111) surface
were made to establish the validity of the (I-S) spectroscopic techni
que in air. The chemical composition of the InP(100) surface before an
d after sulphur passivation is determined by X-ray photoelectron spect
roscopy (XPS) measurements. (C) 1998 Elsevier Science B.V.