SCANNING-TUNNELING-MICROSCOPY STUDY OF THE EVOLUTION OF THE GAAS(001)SURFACE DURING THE (2X4)-(4X2) PHASE-TRANSITION

Authors
CHIZHOV I LEE G WILLIS RF LUBYSHEV D MILLER DL
Citation
I. Chizhov et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF THE EVOLUTION OF THE GAAS(001)SURFACE DURING THE (2X4)-(4X2) PHASE-TRANSITION, Applied surface science, 123, 1998, pp. 192-198
Citations number
30
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
192 - 198
Database
ISI
SICI code
0169-4332(1998)123:<192:SSOTEO>2.0.ZU;2-V
Abstract
Evolution of the GaAs(001) surface during the transition from the As-r ich 2 X 4 to the Ga-rich 4 X 2 phase has been studied by scanning tunn eling microscopy (STM). It was found that the (2 X 4) --> (4 X 2) tran sition proceeds via the formation of intermediate multi-domain phases exhibiting 3 X 6 and 4 X 6 low-energy electron-diffraction (LEED) patt erns. The STM images reveal that the 3 X 6 phase is composed of region s of the '2 X 6' and another phase with no long-range order, while the 4 X 6 phase in addition contains 4 X 2 domains. A new structural mode l for the '2 X 6' phase based on the analysis of high-resolution dual polarity bias STM images is proposed. (C) 1998 Elsevier Science B.V.