Structure and electronic properties of clean and hydrogen-terminated I
nP surfaces are studied by reflectance anisotropy spectroscopy (RAS),
Auger electron spectroscopy (AES), high resolution energy electron los
s spectroscopy (HREELS), low energy electron diffraction (LEED) and so
ft X-ray photoelectron spectroscopy (SXPS). Clean surfaces were prepar
ed either by sputtering and annealing or decapping (As/P-cap). Both pr
eparation methods lead to the same type of (2 X 4) surface structure w
ith slightly different ratios of indium to phosphorus. The correspondi
ng structural changes of the surface during hydrogen exposure are inve
stigated by LEED, surface electronic modifications are observed by RAS
. Medium exposures of atomic hydrogen break In bonds at the surface wh
ile high exposures lead to an In enrichment of the surface. With incre
asing hydrogen exposure the optical anisotropy is lifted. (C) 1998 Els
evier Science B.V.