THE EFFECT OF SUBMONOLAYER COVERAGES OF GA ON THE OPTICAL ANISOTROPY OF VICINAL SI(001)

Authors
CHANDOLA S POWER JR FARRELL T WEIGHTMAN P MCGILP JF
Citation
S. Chandola et al., THE EFFECT OF SUBMONOLAYER COVERAGES OF GA ON THE OPTICAL ANISOTROPY OF VICINAL SI(001), Applied surface science, 123, 1998, pp. 233-236
Citations number
16
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
233 - 236
Database
ISI
SICI code
0169-4332(1998)123:<233:TEOSCO>2.0.ZU;2-J
Abstract
The effect of submonolayer (ML) coverages of gallium on vicinal Si(001 ) has been investigated using reflectance anisotropy spectroscopy (RAS ). A feature at 1.8 eV is sensitive to different annealing conditions and has been associated with optical transitions of the Si(001)-(2 X 2 )-Ga structure involving Ga dimers. The Si(001)-(2 X 2)-Ga structure i s stable to annealing to 600 degrees C. The 1.8 eV feature is still ev ident after deposition of 1.5 ML Ga at room temperature, indicating th at some Ga dimers from the (2 X 2)-Ga structure are still present at t hese coverages. (C) 1998 Elsevier Science B.V.