A. Madhukar et al., ON THE ATOMISTIC AND KINETIC NATURE OF STRAINED EPITAXY AND FORMATIONOF COHERENT 3D ISLAND QUANTUM BOXES, Applied surface science, 123, 1998, pp. 266-275
Citations number
30
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Some remarkable recent results of the in situ scanning tunneling micro
scope (STM) and atomic force microscope (AFM) studies of InAs coherent
3D island initiation and evolution on GaAs(001) are presented in the
larger context of the field of strained epitaxy. The role of nano and
meso scale mesas in manipulating stress/strain is illustrated through
examples of growths on in sim, purely growth control prepared stripe a
nd square mesas with linear dimensions as small as similar to 40 nm. A
set of basic kinetic processes and their strain dependence is identif
ied and suggested to form a good core that has the potential for provi
ding a unified framework for understanding strained epitaxy ranging fr
om low misfits to high misfits. (C) 1998 Elsevier Science B.V.