THE ROLE OF 2D ISLANDS IN THE EPITAXIAL-GROWTH OF (001)CDTE

We present an extensive study of the homoepitaxial growth of (001) CdT e with st particular emphasis on the variation of the lattice paramete r and on the determination of the surface stoichiometry during the gro wth as well as the related evolution of the growth rate. An oscillator y behavior of the in plane lattice parameter during the 2D homoepitaxi al growth of (001) CdTe is demonstrated. It is associated to a deforma tion, induced by the surface reconstructions, at the free edges of the small islands formed during the growth by molecular beam epitaxy (MBE ) or atomic layer epitaxy. During the MBE growth, the presence on top of the CdTe growing surface of both chemisorbed dimerized tellurium at oms and weakly bonded Te atoms adsorbed on top of this Te layer is evi denced. The influence of the stoichiometry on the evolution of the gro wth rate is demonstrated. Moreover, an influence of strain on the grow th mechanisms of CdTe has been observed. (C) 1998 Elsevier Science B.V .