ELECTROCHEMICAL FORMATION AND CHARACTERIZATION OF SCHOTTKY INPLANE AND WRAP GATE STRUCTURES FOR REALIZATION OF GAAS-BASED AND INP-BASED QUANTUM WIRES AND DOTS

In order to realize high temperature operating quantum devices, this p aper attempts to form nm-size Schottky in-plane gate (IPG) and wrap ga te (WPG) structures on GaAs- and InP-based nanostructures by an in-sit u electrochemical process. Pulsed electrodeposition of Pt was found to be optimal, realizing nearly pinning-free high Schottky barrier heigh ts as well as fine and highly uniform nm-size grains with minimal stre ss. Using the optimized process, quantum wire transistors and single e lectron transistors were successfully realized on GaAs etched 2DEG bar s and on MBE grown InGaAs ridge quantum wires. (C) 1998 Elsevier Scien ce B.V.