DIFFERENCES BETWEEN SILICON OXYCARBIDE REGIONS AT SIC-SIO2 PREPARED BY PLASMA-ASSISTED OXIDATION AND THERMAL OXIDATIONS

Authors
LUCOVSKY G NIIMI H GOLZ A KURZ H
Citation
G. Lucovsky et al., DIFFERENCES BETWEEN SILICON OXYCARBIDE REGIONS AT SIC-SIO2 PREPARED BY PLASMA-ASSISTED OXIDATION AND THERMAL OXIDATIONS, Applied surface science, 123, 1998, pp. 435-439
Citations number
9
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
435 - 439
Database
ISI
SICI code
0169-4332(1998)123:<435:DBSORA>2.0.ZU;2-1
Abstract
The initial stages of SiC-SiO2 interface formation by low temperature (300 degrees C) remote plasma assisted oxidation (RPAO) have been stud ied by on-line Anger electron spectroscopy (AES) for flat and vicinal 6H SiC(0001) wafers with Si(0001) and C faces (0001), focusing on (i) interfacial bonding and (ii) oxidation rates for thickness up to about 2 nm. (C) 1998 Elsevier Science B.V.