Rh. Miwa et Ac. Ferraz, STRUCTURE AND ENERGETICS OF AS DIMERS ON GAAS(CHALCOGEN)(001) SURFACES AND GAAS TE/INAS INTERFACE/, Applied surface science, 123, 1998, pp. 449-453
Citations number
15
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
We have performed first principles calculations for the adsorption of
As-2 molecules over GaAs:Te, GaAs:Se and GaAs:S(001) surfaces. We inve
stigate the dimer exchange process between the adsorbed As-2 dimer and
the sublayer chalcogen atoms. The adsorption on Te terminated surface
and the subsequent exchange process, confirm the surfactant action of
Te atoms. For Se and S covered surfaces, the adsorption of As-2 molec
ule is an exothermic process, but the subsequent Se(S) <-> As exchange
process is not energetically favourable. The GaAs/Te/InAs interface w
ith half a monolayer of Te is also considered. For the interface we fi
nd a valence-band offset of 0.18 eV. (C) 1998 Elsevier Science B.V.