SCHOTTKY-BARRIER HEIGHT AT THE AU POROUS SILICON INTERFACE/

Authors
KE ML MATTHAI CC PAVLOV A LAIHO R
Citation
Ml. Ke et al., SCHOTTKY-BARRIER HEIGHT AT THE AU POROUS SILICON INTERFACE/, Applied surface science, 123, 1998, pp. 454-457
Citations number
17
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
454 - 457
Database
ISI
SICI code
0169-4332(1998)123:<454:SHATAP>2.0.ZU;2-C
Abstract
The Schottky barrier height at the Au/porous silicon interface has bee n studied with ballistic electron emission microscopy (BEEM). The poro us silicon thin films were prepared by laser ablation, The barrier hei ght was found to display considerable variation across the interface. We suggest that this barrier height variation is a reflection of the l ocal bonding differences at the Au/porous Si interface. (C) 1998 Elsev ier Science B.V.