SI 2P CORE-LEVEL SHIFTS AT THE CDTE SI(100) INTERFACE/

Growth of CdTe(111)B on Si(100) by molecular beam epitaxy (MBE) was st udied with photoelectron spectroscopy using synchrotron radiation. Fir st. a monolayer of Te forms on top of the Si(100) substrate. We sugges t that these Te atoms replace the Si dimer atoms and form dimer rows. The surface peak in the Si 2p spectra from clean Si(100) is replaced b y four adatom-induced peaks. They are assigned to Si atoms bound to on e, two, three and four Te atoms, respectively. Some Te seems to diffus e into the substrate. Finally, CdTe(111)B grows on such Te-terminated Si(100) surfaces, with little effect on the interface electronic struc ture. (C) 1998 Elsevier Science B.V.