SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON N-IN0.53GA0.47AS USING DELTA-DOPING

Authors
NAWAZ R ELLIOTT M WILKS SP WILLIAMS RH BLAND SW DAVIES JI
Citation
R. Nawaz et al., SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON N-IN0.53GA0.47AS USING DELTA-DOPING, Applied surface science, 123, 1998, pp. 467-470
Citations number
5
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
467 - 470
Database
ISI
SICI code
0169-4332(1998)123:<467:SHEONU>2.0.ZU;2-Q
Abstract
We describe the use of n- and p-type delta-doping layers in n-In0.53Ga 0.47As for Schottky barrier enhancement. The delta-doping layers are i ntroduced by MOCVD using silicon and zinc dopants respectively. From c urrent-voltage characteristics of Au/In0.53Ga0.47As diodes measured at room temperature, we find substantial effective Schottky barrier heig ht enhancement, with a best value of 0.69 eV and corresponding idealit y factor of 1.06. Numerical modelling of Poisson's equation for these structures predicts effective barrier heights in good agreement with t hose measured. (C) 1998 Elsevier Science B.V.