INITIAL-STAGE OF THE GROWTH OF GAS THIN-FILMS ON GAAS

The initial stage of the growth of GaS on GaAs(111)A has been studied by Auger electron spectroscopy (AES), low-energy electron-loss spectro scopy (LEELS) and X-ray photoemission spectroscopy (XPS) as a function of deposition and annealing temperatures. The thermal evaporation of GaS single crystal is used for the deposition. The LEELS spectrum of t he films with thickness of about 20 Angstrom grown at 400 degrees C re sembles that of GaS single crystal, while there are some missing loss peaks in the films grown at 350 degrees C due to the poor crystal qual ity. LEELS and XPS spectra suggest that the crystal quality of films g rown at 350 and 400 degrees C is improved by the post annealing at 450 degrees C. (C) 1998 Elsevier Science B.V.