IN-SITU INVESTIGATION OF THE FORMATION OF AN INTERMIXED PHASE AT THE NI SI(100) INTERFACE BY PHOTOELECTRON SPECTROSCOPIC METHODS/

Photoemission experiments were performed systematically on Ni/Si(100) interfaces and amorphous alloys with different nickel coverages and co ntent, respectively. Both valence-band spectra and analysis of core le vel spectroscopy of the Ni2p(3/2) indicate the formation of a homogene ous intermixed, amorphous interface layer, The nickel content in this layer varies in a wide range with the nominal nickel coverage as long as the respective amorphous alloys exist. The interface reaction is te rminated at a Ni concentration of about 75 at%, which coincides with t he known upper stability limit for the amorphous alloy. (C) 1998 Elsev ier Science B.V.