ELECTRICAL-PROPERTIES OF NANOSIZED NON-BARRIER INHOMOGENEITIES IN ZN-BASED METAL-SEMICONDUCTOR CONTACTS TO INP

Authors
CLAUSEN T LEISTIKO O
Citation
T. Clausen et O. Leistiko, ELECTRICAL-PROPERTIES OF NANOSIZED NON-BARRIER INHOMOGENEITIES IN ZN-BASED METAL-SEMICONDUCTOR CONTACTS TO INP, Applied surface science, 123, 1998, pp. 567-570
Citations number
4
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
567 - 570
Database
ISI
SICI code
0169-4332(1998)123:<567:EONNII>2.0.ZU;2-G
Abstract
We have found that the electrical properties of carriers across the me tal-semiconductor interface for alloyed Zn based metallizations to n- and p-InP are dominated by nanosized non-barrier inhomogeneities. The effective area covered by the nanosized regions is a small fraction of the contact area resulting in high values of the specific contact res istance to p-InP. For n(-)-InP, thermionic emission across nanosized i nhomogeneities dominates the carrier flow when T-ann > 440 degrees C. (C) 1998 Elsevier Science B.V.