T. Clausen et O. Leistiko, ELECTRICAL-PROPERTIES OF NANOSIZED NON-BARRIER INHOMOGENEITIES IN ZN-BASED METAL-SEMICONDUCTOR CONTACTS TO INP, Applied surface science, 123, 1998, pp. 567-570
Citations number
4
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
We have found that the electrical properties of carriers across the me
tal-semiconductor interface for alloyed Zn based metallizations to n-
and p-InP are dominated by nanosized non-barrier inhomogeneities. The
effective area covered by the nanosized regions is a small fraction of
the contact area resulting in high values of the specific contact res
istance to p-InP. For n(-)-InP, thermionic emission across nanosized i
nhomogeneities dominates the carrier flow when T-ann > 440 degrees C.
(C) 1998 Elsevier Science B.V.