THEORETICAL-STUDY OF THE ROLE OF NATURAL INTRALAYERS IN THE BAND OFFSETS OF INAS GASB HETEROJUNCTION/

Authors
GONZALEZDIAZ M RODRIGUEZHERNANDEZ P MUNOZ A
Citation
M. Gonzalezdiaz et al., THEORETICAL-STUDY OF THE ROLE OF NATURAL INTRALAYERS IN THE BAND OFFSETS OF INAS GASB HETEROJUNCTION/, Applied surface science, 123, 1998, pp. 571-574
Citations number
19
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
571 - 574
Database
ISI
SICI code
0169-4332(1998)123:<571:TOTRON>2.0.ZU;2-2
Abstract
We present a theoretical study of the role of the natural intralayers on the atomic and electronic properties of the ZnAs/GaAs heterojunctio ns. Using first principles total energy calculations based on the dens ity functional theory we analyze the role of the natural GaAs and InSb intralayers on the band offset control. We show how the chemical and geometrical composition of the intralayers can modify the band discont inuity, providing a mechanism for band offset engineering. (C) 1998 El sevier Science B.V.