FROM CDTE FE SCHOTTKY-BARRIER TO CD1-XFEXTE SEMIMAGNETIC SEMICONDUCTOR/

Citation
Ba. Orlowski et al., FROM CDTE FE SCHOTTKY-BARRIER TO CD1-XFEXTE SEMIMAGNETIC SEMICONDUCTOR/, Applied surface science, 123, 1998, pp. 631-635
Citations number
7
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
631 - 635
Database
ISI
SICI code
0169-4332(1998)123:<631:FCFSTC>2.0.ZU;2-S
Abstract
Synchrotron radiation tuned to the Fe 3p-3d transition (hv = 56 eV) wa s used to study Fano type resonant photoemission spectra for a clean C dTe(110) surface sequentially covered in the monolayer (ML) range by F e atoms and annealed. The results showed that, in the first stage of t he deposition, the Fe atoms are mainly involved in the creation of a C d1-xFexTe ternary crystal (0.2-0.6 ML). At higher coverages (1.2 ML), the contribution of Fe metallic islands becomes visible. CdTe dissocia tion in the surface region leads to the appearance of Cd-Fe interactio n at higher Fe deposition (3.6 ML). After deposition of 20 ML, sample annealing in the 300 degrees C range leads to Fe diffusion into the cr ystal and the measured spectra correspond well to the Cd1-xFexTe calcu lated spectra. (C) 1998 Elsevier Science B.V.