P. Depadova et al., HIGH-RESOLUTION PHOTOEMISSION-STUDY OF THE SURFACTANT DESORPTION AFTER SB MEDIATED GE EPITAXY ON SI(001), Applied surface science, 123, 1998, pp. 641-645
Citations number
21
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The deposition of 3 ML of Ge on Si(001) in the presence of 1 ML of Sb
was investigated by core level photoemission spectroscopy. In addition
to the predominant localisation of Ge below Sb, revealed by the compa
rison between a surface-sensitive and a bulk-sensitive detection confi
guration, the complete lack of surface components in the Ge 3d spectru
m indicates the absence of dimerized Ge atoms at the top layer. Ge(2 x
1) surface reconstruction was recovered when desorbing Sb by annealin
g cycles to 750 degrees C. The possibility to reversibly recover the s
urface reconstruction when adding and removing an Sb capping layer on
Ge/Si(001) indicates that Sb can be successfully used to preserve perf
ectly terminated SiGe heterostructures against contamination. (C) 1998
Elsevier Science B.V.