HIGH-RESOLUTION PHOTOEMISSION-STUDY OF THE SURFACTANT DESORPTION AFTER SB MEDIATED GE EPITAXY ON SI(001)

Citation
P. Depadova et al., HIGH-RESOLUTION PHOTOEMISSION-STUDY OF THE SURFACTANT DESORPTION AFTER SB MEDIATED GE EPITAXY ON SI(001), Applied surface science, 123, 1998, pp. 641-645
Citations number
21
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
641 - 645
Database
ISI
SICI code
0169-4332(1998)123:<641:HPOTSD>2.0.ZU;2-7
Abstract
The deposition of 3 ML of Ge on Si(001) in the presence of 1 ML of Sb was investigated by core level photoemission spectroscopy. In addition to the predominant localisation of Ge below Sb, revealed by the compa rison between a surface-sensitive and a bulk-sensitive detection confi guration, the complete lack of surface components in the Ge 3d spectru m indicates the absence of dimerized Ge atoms at the top layer. Ge(2 x 1) surface reconstruction was recovered when desorbing Sb by annealin g cycles to 750 degrees C. The possibility to reversibly recover the s urface reconstruction when adding and removing an Sb capping layer on Ge/Si(001) indicates that Sb can be successfully used to preserve perf ectly terminated SiGe heterostructures against contamination. (C) 1998 Elsevier Science B.V.