THEORY OF QUANTUM-DOT FORMATION IN STRANSKI-KRASTANOV SYSTEMS

Authors
DOBBS HT VVEDENSKY DD ZANGWILL A
Citation
Ht. Dobbs et al., THEORY OF QUANTUM-DOT FORMATION IN STRANSKI-KRASTANOV SYSTEMS, Applied surface science, 123, 1998, pp. 646-652
Citations number
31
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
646 - 652
Database
ISI
SICI code
0169-4332(1998)123:<646:TOQFIS>2.0.ZU;2-Z
Abstract
The formation of coherent three-dimensional (3D) islands during Strans ki-Krastanov growth of semiconductors is modelled with rate equations. Effects of strain are included in the growth rate of two-dimensional (2D) islands (atop a wetting layer) and in the transformation of 2D in to 3D islands. Comparisons with measured 3D island densities for InP g rown on GaP-stabilised GaAs(001) by metalorganic vapor-phase epitaxy a re used to parametrize the model and to identify the rate-determining steps for 3D island formation. (C) 1998 Elsevier Science B.V.