GAAS ALAS LATERAL SUPERLATTICES ON VICINAL SURFACES - FROM GROWTH ISSUES TO NEW ELECTRONIC-PROPERTIES/

Authors
LARUELLE F LELARGE F CAVANNA A MELIN T PETIT F
Citation
F. Laruelle et al., GAAS ALAS LATERAL SUPERLATTICES ON VICINAL SURFACES - FROM GROWTH ISSUES TO NEW ELECTRONIC-PROPERTIES/, Applied surface science, 123, 1998, pp. 682-686
Citations number
15
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
123
Year of publication
1998
Pages
682 - 686
Database
ISI
SICI code
0169-4332(1998)123:<682:GALSOV>2.0.ZU;2-X
Abstract
The AFM topography of GaAs vicinal surfaces shows that the step-step i nteraction is dominated by an important dipolar term which compensates the low kink energy to give straight ledges at 600 degrees C. The Ga/ Al ordering in GaAs/AlAs lateral superlattices is shown to be limited by the step array disorder as well as by the vertical exchange treated in a mean field approximation. (C) 1998 Elsevier Science B.V.